Evaluation of LB Films as Quarter Micron Lithography Resists Using Excimer Laser, X-Ray, and Electron Beam Exposure

An evaluation of LB films was performed to determine whether or not LB films were applicable to quarter micron lithography using excimer laser (EX), X-ray and electron beam (EB) exposure. The pattern resolution and sensitivity were investigated on seven kids of LB films. The highest resolutions obtained were 0.3 µm for pentacosa diynoic acid (PDA) using EX exposure, 0.4 µm for ω-tricocynoic acid (TCA) using X-ray exposure and 0.2 µm for TCA using EB exposure. On the basis of these results, it was concluded that quarter micron lithography would be possible on LB films using the former two methods if the resolution of the lens for EX exposure was improved and a mask having finer patterns for X-ray exposure was obtained.