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We propose a new trilayer resist system (photoresist/As2S3/polymethyl methacrylate) using spin-coated As2S3 (0.20 μm thick) as a barrier layer. As2S3 has shown high etch rate (more than 30 times) in SF6+4% O2 reactive ion etching compared to organic photoresists which allows a precise pattern transfer. The spin coating process of As2S3 is compatible with conventional processing. As2S3 has high absorption coefficient in ultraviolet and deep UV eliminating substrate reflection. Patterns of micron and submicron dimensions were replicated successfully.
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Singh et al. (1984) studied this question.
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