We propose a new silicone based negative resist (SNR) for a high resolution double layer resist system. SNR shows high sensitivity to an e-beam, D0.5=5 µC/cm2, with high contrast γ=2, and excellent resistance to reactive ion etching under oxygen gas. A submicron pattern with a high aspect ratio can be easily fabricated with the SNR/AZ double layer resist system. It is also shown that submicron lithography can be accomplished on a substrate with topographic features.
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Morita et al. (1983) studied this question.
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