Phase evolution in AgSbS2 thin films synthesized via a two-stage process

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This study explores the influence of stacking order and sulfurization pressure on the phase evolution, structural properties, and optoelectronic performance of AgSbS 2 thin films. Sulfurizing Sb/Ag and Ag/Sb/Ag stacks at 350 ° C revealed distinct outcomes: the Sb/Ag stack produced compact, phase-pure cubic AgSbS 2 with a direct bandgap of 1.61 eV and high hole mobility (84 cm 2 V −1 s 2 ), while the Ag/Sb/Ag stack contained Ag 3 SbS 3 impurities and exhibited reduced electrical performance. Sulfurization pressures from 750 Torr to 7.5 Torr significantly impacted crystallinity, phase composition, and grain morphology. Higher pressures favored phase-pure cubic AgSbS 2 with enhanced compactness, while lower pressures promoted impurities and reduced film quality. The AgSbS 2 solar cells fabricated from the Sb/Ag stack achieved 0.95% efficiency (V OC of 519.2 mV, J SC of 6.11 mA/cm 2 , FF of 30.0%), surpassing the efficiency of the Ag/Sb/Ag stack (0.7% efficiency, V OC of 513.4 mV, J SC of 4.45 mA/cm 2 , FF of 32.6%) due to improved phase purity. • Impacts of stacking order and (N 2 +S 2 ) pressure on AgSbS 2 phase evolution explored. • The Sb/Ag stack produced phase-pure AgSbS 2 films with better physical properties. • The Ag/Sb/Ag stack enhanced grain growth and Ag 3 SbS 3 impurity phase formation. • Higher pressure favored pure AgSbS 2 , while lower pressure induced Ag 3 SbS 3 phase. • Solar cells with Sb/Ag stack achieved an η of 0.95%, surpassing Ag/Sb/Ag (0.7%).