Effect of Thermal Convection on Liquid Phase Epitaxy of GaN by Na Flux Method

In the liquid phase epitaxy (LPE) growth of GaN single crystals using the Na flux method, we achieved an increase in the growth rate and a change in the growth thickness distribution by generating thermal convection in the Ga–Na melt. The effect of thermal convection on the growth rate and growth thickness distribution became stronger with the strength of the convection, which indicates that thermal convection can produce a high dissolution rate of nitrogen gas into the melt as well as homogenize the nitrogen concentration.