We start from the theoretical calculations of Alt'shuler et al. and Lee and Ramakrishnan for the contributions to magnetoresistance from weak localization and electron-electron interactions in a disordered system. We give analytic expressions which can be more easily handled by experimentalists. Our results on the amorphous alloys La3Al and La3Ga are presented and interpreted using these equations to get the best fit.
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Ousset et al. (1985) studied this question.
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