The conductivity of Ge_1-x{Au}ₓthin films was studied at temperatures in the range 0.019T4.2 K. In the linear (low-bias) regime, samples with 0x0.14 showed resistivity with exp{T}*$/T behavior. The x dependence of ${T}*accurately followed the theory of Shklovskii and Efros, which includes a Coulomb gap in the electronic density of states. At bias fields exceeding ~{10}⁴$ V/m, nonlinearity was observed that can be accounted for by introducing the effect of the bias field into a calculation of the optimized hopping exponent.
No takes yet. Share an insight, caveat, or question.
Wang et al. (1995) studied this question.
Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context: