Interfacial wetting in a liquid binary alloy

We report the first study of interfacial wetting at the liquid-vapour surface of metallic gallium-bismuth alloys approaching the miscibility gap. Ellipsometry has been used to probe the interface continuously with increasing temperature along the coexistence curve. Below the monotectic (eutectic) temperature T mono a liquid Ga-rich phase is in equilibrium with solid bismuth and the real part epsilon 1 of the complex dielectric function measured at the liquid surface clearly reflects Ga-like behaviour. Above T mono the second liquid Bi-rich phase becomes stable and epsilon 1 changes from Ga-like to Bi-like behaviour. We conclude that the Bi-rich phase, which has the higher mass density, now covers the low-density phase. This can be consistently interpreted as complete wetting of the interface between the vapour and the Ga-rich phase by a coexisting Bi-rich layer.