We present measurements on hybrid ferromagnetic/semiconductor devices. Single, submicron ferromagnetic structures have been fabricated directly onto the surface of a semiconductor, which incorporates a near-surface two-dimensional electron gas (2DEG). The induced Hall resistance and magnetoresistance of the 2DEG are used to measure the magnetic properties of the stripes directly. The relative merits of these two techniques are compared using a device geometry in which both types of measurement can be made simultaneously.
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Kubrak et al. (2000) studied this question.
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