The electric-pulse-induced resistive switching effect is studied for Ti 0.85 Cr 0.15 O x (TCO) films grown on Ir—Si substrates by pulsed laser deposition. Such a TCO device exhibits bipolar switching behaviour with an electric-pulse-induced resistance ratio as large as about 1000% and threshold voltages smaller than 2 V. The resistive switching characteristics may be understood by resistance changes of a Schottky junction composed of a metal and an n -type semiconductor, and its nonvolatility is attributed to the movement of oxygen vacancies near the interface.
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Zhongwen Xing (2011) studied this question.
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