Continuous Wave Performance and Tunability of MBE Grown 2.1 μm InGaAsSb/AlGaAsSb MQW lasers

InGaAsSb/AlGaAsSb multi quantum well ridge waveguide lasers at 2.1 μm wavelength are fabricated by using molecular beam epitaxy. Continuous wave performance and tunability of the lasers are evaluated in a wide temperature range extend to 80°C. Output power of the laser at 30°C exceeds 30 mW/facet at driving current of 0.5 A, the characteristic temperature T 0 is 89 K in 0–50°C range. No fast degradation is observed in accelerated aging test at 90°C for those lasers with lower Al content in cladding layers. Temperature tunability of the lasers is 1.36 nm/K. Single-mode output with side mode suppression ratios greater than 20 dB is achieved in a certain driving current region; current tunability is 8 × 10 −3 nm/mA regardless of mode hopping.