Submicrometer buried-channel MOSFET's isolated by a buried oxide layer formed by oxygen ion-implantation technology were fabricated and their switching performances were evaluated. An n-channel E/D MOS ring oscillator with 0.5-µm channel devices has achieved a minimum delay time of 139 ps at 3.5-v drain voltage at room temperature and 78.4 ps at 7-V drain voltage at 77 K.
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Ōmura et al. (1982) studied this question.