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Cathodoluminescence scanning electron microscopy is utilized to investigate the stresses present underneath 0.4 μm gold layers deposited on GaAs/AlGaAs multiple quantum well structures grown by molecular beam epitaxy on GaAs substrates. Using the known stress dependence of excitonic lines in quantum wells, the magnitude of stress is determined to be about 1 kbar. The stress-induced change in the refractive index, attributed to photoelastic effect, is about 0.01 for the structures studied in the present work.
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Yacobi et al. (1988) studied this question.
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