Use of Stress To Produce Highly Oriented Tetragonal Lead Zirconate Titanate (PZT 40/60) Thin Films and Resulting Electrical Properties

Thin films of Pb(Zr 0.4 Ti O.6 )O 3 produced by chemical solution deposition were used to study the effects of stress from different platinized single‐crystal substrates on film orientation and resulting electrical properties. Films deposited on MgO preferred a (001) orientation due to compressive stress on the film during cooling through the Curie temperature ( T C ). Films on Al 2 O 3 were under minimal stress at T C , resulting in a mixture of orientations. Those on Si preferred a (111) orientation due to templating from the bottom electrode. Films oriented in the 〈001〉 direction demonstrated lower dielectric constants and higher P r and − d 31 values than (111) films.