Isothermal capacitance transient spectroscopy was applied to the ZnO varistor. Spectroscopic signals obtained at around room temperature were related to the interface state of 0.60 eV below the conduction band edge. Furthermore, a bulk trap of 0.27 eV was detected at lower temperatures (121 K∼153 K), which corresponds to the result obtained by admittance spectroscopy.
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Maeda et al. (1989) studied this question.
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