The electrical conductivity and the thermoelectric power of boron carbide are investigated in the temperature range from 80 to 700 K on samples of compositions between B12.94C2.06 and B10.59C4.41. While the extrinsic thermal activation of free carriers dominates the electronic transport at high temperatures, at low temperatures a metal—insulator transition occurs depending on the C content. Lower C contents than B12C3 cause variable‐range hopping (In σ ∼ T−1/4) whereas higher contents lead to impurity‐band conduction. The overlap of two impurity bands (possibly Hubbard bands) attributed to the carbon in boron carbide is assumed.
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Werheit et al. (1980) studied this question.
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