A contact metallization scheme of Ge/Pd(Zn), based on the solid-phase regrowth principle, has been developed for the formation of Ohmic contact on p-InP. Typical contact resistivities of low 10−4 to low 10−5 Ω cm2 can be obtained after annealing at temperatures higher than 400 °C. Cross-sectional transmission electron microscopy study confirmed the solid-phase regrowth process in the InP substrate. Precipitates of trapped materials during solid phase regrowth have also been observed. A solid phase regrowth model is proposed to rationalize the electrical and metallurgical properties. This solid phase regrowth process is expected to form low resistance Ohmic contact on other In-based compound semiconductors.
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Wang et al. (1995) studied this question.