Boron Impurity Profile Tailoring in Silicon by Ion Implantation and Measurement by Glow Discharge Optical Spectroscopy

Glow discharge optical spectroscopy (GDOS) is used to measure distributions of implanted B in Si before and after annealing. Methods for GDOS measurement are discussed, and data are presented indicating the resolution and sensitivity of this technique. Impurity profiles are synthesized by multiple B implantations, and examples of uniform and hyperabrupt distributions are presented. Measurements of these profiles with GDOS exhibit excellent agreement with theoretical predictions. Distortion of the B distribution due to diffusion during annealing is less pronounced in the multiple implant profiles than is the case for a single gaussian.