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We have realized a low threshold InGaAs/GaAs vertical-cavity surface emitting laser (VCSEL) grown on GaAs (311)B substrates by metalorganic chemical-vapor deposition. The lasers exhibited a threshold current of 16 mA and a threshold current density of 810 A/cm2 for a 50 µmφ circular active area device. We obtained low electric resistance of p-type DBRs on GaAs (311)B by using AlAs carbon auto-doping with a hole concentration of 2×1019 cm-3. We also demonstrated a stable polarization operation of (311)B grown VCSELs.
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Mizutani et al. (1998) studied this question.
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