444.9 nm semipolar (112¯2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer

We demonstrate an electrically injected semipolar (112¯2) laser diode (LD) grown on an intentionally stress relaxed n-In0.09Ga0.91N waveguiding layer. Detrimental effects of misfit dislocations (MDs) in the proximity of the active region were effectively suppressed by utilizing a p/n-Al0.2Ga0.8N electron/hole blocking layer between the dislocated heterointerfaces and the active region. The threshold current density of the LD was ∼20.3 kA/cm2 with a lasing wavelength of 444.9 nm. This LD demonstrates an alternative approach in semipolar AlInGaN LD waveguide design where the thickness and composition of the waveguiding and/or cladding layers are not limited by the critical thickness for MD formation.