A theoretical model was developed to simulate the apparent substrate temperature oscillation during the growth of AlAs/AlxGa1−xAs, x=0 and 0.25, distributed Bragg reflectors (DBR) for 980- and 780-nm vertical cavity surface emitting lasers, respectively. The simulated data were then used for in situ monitoring and feedback control of layer thickness by a simple pyrometric interferometry technique to obtain a highly reproducible DBR. These measurements can be performed with continuous substrate rotation and without any growth interruption. The reproducibility of the center wavelength and full width at half-maximum of the reflectivity stop band with a variation of <±0.2% and <±0.4% for the AlAs/GaAs and AlAs/AlGaAs mirror stacks, respectively, were achieved.
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Houng et al. (1994) studied this question.