We investigate the noise properties of a GaAs/AlₓGa_1-xAs resonant-tunneling structure at bias voltages where the current characteristic is determined by single electron tunneling. We discuss the suppression of the shot noise in the framework of a coupled two-state system. For large bias voltages we observe super-Poissonian shot noise up to values of the Fano factor α≈10.
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Nauen et al. (2004) studied this question.
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