We report the growth and characterization of atomically thick NbS 2 , TaS 2 , and FeS films on a 6 H -SiC(0001) substrate terminated with monolayer or bilayer epitaxial graphene. The crystal and electronic structures are studied by scanning tunneling microscopy and reflection high-energy electron diffraction. The NbS 2 monolayer is solely in the 2 H structure, while the TaS 2 monolayer contains both 1 T and 2 H structures. Charge-density waves are observed in all phases. For the FeS films, the tetragonal structure coexists with the hexagonal one and no superconductivity is observed.
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Lin et al. (2018) studied this question.
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