1.3 μ m InGaAs vertical-cavity surface-emitting lasers with mode filter for single mode operation

We report on the performance and analysis of 1.3μm range InGaAs∕GaAs vertical-cavity surface-emitting lasers (VCSELs) with an integrated mode filter consisting of a patterned silicon layer on the top distributer Bragg reflector. In this way, 1mW of single mode power is obtained from a device with a wavelength of 1265nm and a threshold current of 2.6mA at room temperature. An effective index model is used to extract the internal and external losses of the VCSEL structure and to predict the modal losses with and without mode filter, thereby providing a useful design tool for single mode VCSELs.