In this paper, the dopant (phosphorus) effects of polycrystalline silicon (poly‐Si) on dichlorosilane‐based tungsten silicide deposition have been studied with emphasis on the crystallinity of the WSi x film. The WSi x over doped poly‐Si (polycide) was formed using an integrated cluster platform which was equipped with chambers for the deposition of the in situ doped poly‐Si and the dichlorosilane‐based tungsten silicide without vacuum break. It was found that the phosphorus atoms in poly‐Si films enhance the dissociation of WF 6 , and thus yield a W excessive WSi x film having an amorphous feature. As the P concentration of the poly‐Si is increased while the deposition temperature is decreased the formation of the amorphous layer is facilitated. This systematic study reviews the correlations between the dopant in the underlying poly‐Si and the structural, compositional, and electrical properties of the as‐deposited and the annealed WSi x films. Finally, a successful integrated polycide process, avoiding such a dopant effect, has been suggested.
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Byun et al. (1997) studied this question.