The emission efficiency droop and internal quantum efficiency (IQE) in AlGaN epilayers and heterostructures were investigated by studying photoluminescence intensity dependence on excitation power density at different temperatures in the range from 8 to 300 K in three AlGaN samples with similar Al content (33%-35%) and different strength of carrier localization: an epilayer and multiple quantum wells with well widths of 5.0 and 2.5 nm. It is shown that the phenomena leading to the efficiency droop strongly influence the photoluminescence intensity dependence on temperature and, therefore, affect the estimation of IQE based on this dependence. A procedure to optimize the determination of IQE is proposed.
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Mickevičius et al. (2012) studied this question.
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