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January 1, 1963Journal of The Electrochemical SocietyOpen Access

Oxygen-Controlled Conduction in Thin Films of Cuprous Iodide: A Mixed Valency Anion Semiconductor

Carlyle S. Herrick A.D. Tevebaugh

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Abstract

Oxygen present in cuprous iodide greatly increases the electrical conductivity. Copper films were formed with differing oxygen contents by copper vapor condensation at various oxygen pressures. After iodination to the conductivity was found proportional to the 1/8.4 power of the oxygen pressure during condensation. Cuprous iodide with oxygen created conductors is a mixed valency anion semiconductor.

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Herrick et al. (1963) studied this question.

synapsesocial.com/papers/6aa2e96ceb5cc5d2cba59171 https://doi.org/10.1149/1.2425687

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