Bottom-gated metal-induced laterally crystallized silicon thin-film transistor with self-aligned raised source/drain

A bottom-gated metal-induced laterally crystallized silicon thin-film transistor with self-aligned raised source/drain has been fabricated and characterized. In order to achieve complete alignment of the thick source/drain to the gate, a simple process of back surface exposure was employed twice. It features a thin active channel region with fewer grains, resulting in a low grain boundary trap density and a thick source/drain region with a low lateral electric field as well as a low resistance. The proposed device simultaneously improves on the turn-on and -off currents, showing good saturation characteristics and good short-channel characteristics.