Plasma-Enhanced Atomic Layer Deposition of TaC[sub x]N[sub y] Films with tert-Butylimido Tris-diethylamido Tantalum and Methane/Hydrogen Gas

film was deposited with plasma-enhanced atomic layer deposition using tert -butylimido[tri-diethylamido]tantalum and methane/hydrogen reactive gas mixture. The effect of the methane concentration in the gas mixture on the film property was studied. The resistivity was the lowest at with 1.5 mol % methane due to the increase in the TaC conducting phase and with over 2.5 mol %, the resistivity was increased due to the incorporation of free carbon. The work function of the film was measured from the metal-oxide-semiconductor structure with a slanted oxide layer. With the introduction of 1.5–2.5% methane, the film with lower work function could be obtained.