Characterization of µc-Si:H Films Prepared by H2 Sputtering

Hydrogenated microcrystalline Si films were prepared on fused quartz and Si substrates by H2 sputtering of a Si target. The grain size increases with the increasing electrical power required for the sputtering, P s, where the smallest grain size is estimated to be 1.1 nm of the Si and 7.1 nm on the quartz. It is also discovered that Raman spectra change with P s but in a different manner on the Si and the quartz substrates. A reason for this difference is discussed.