Factors contributing to the Si L23V V, Si L1L23V and O K V V Auger lineshape in SiO2

A comparison of the measured Si L23VV, Si L1L23V, and O KVV Auger lineshapes in SiO2 with calculated lineshapes has been reported previously. In this work we carefully examine several of the factors entering the calculated lineshape: the assumed atomic Auger matrix elements, possible contributions due to Auger satellites, and the effects of possible Si 3d electron contributions in the upper valence molecular orbitals. Significantly better agreement between the measured and calculated lineshapes is achieved.