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We investigate the diffusion dynamics of minority-carrier holes in In0.2Ga0.8As/GaAs strained-layer superlattices by measuring their diffusion lengths, both parallel and perpendicular to the layers, and recombination lifetime for temperatures between 78 and 300 K. From these data we determine a phenomenological hopping time for interlayer motion. We also estimate the valence-band barrier heights which govern this motion, by studying the interband quantum well optical transition energies over the same temperature range.
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Gourley et al. (1986) studied this question.
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