Schottky barrier height of metal contacts to p-type alpha 6H-SiC

A survey of metal (Pd, Ni, Au, Ag, Mg, Ti, and Al) Schottky barrier contact formation to p-type Si-face (0001) and C-face (0001̄) 6H-SiC by using x-ray photoemission spectroscopy is reported. The Schottky barrier height φB ranges from 1.17 to 2.56 eV and is influenced by the contact metal work function and the 6H-SiC crystal face. A comparison with prior φB values for n-type material indicates that for similarly prepared metal/6H-SiC interfaces (including those which have been annealed) φBp and φBn sum to the 6H-SiC band gap.