By rapidly heating and cooling a silicon-on-insulator wafer, we show that dislocations are created at the interface between the thin silicon slab and the underlying oxide. Using low-energy electron microscopy, we determine the strain field these dislocations produce at the surface of the silicon slab and show that they can be used as monitors of heteroepitaxy-induced changes in the surface strain.
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Sutter et al. (1999) studied this question.
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