Optimization‐based approach for scalable small‐signal and noise model extraction of GaN‐on‐SiC HEMTs

Summary An optimization‐based method allowing a straightforward extraction of scalable small‐signal equivalent‐circuit models for high‐frequency active devices is proposed. The approach only requires a set of devices with a fixed number of fingers and scaling unit gate widths: no dummy structures or bias conditions potentially harmful for the devices are needed. The extraction method is then demonstrated by presenting in full a sample extraction, carried out on a 0.25 GaN‐on‐SiC HEMT technology provided by Selex‐ES. The example also includes the extraction of a noise model, by means of a well‐known noise‐temperature approach. Both the small‐signal and noise models agree well with the experimental data.