The effect of localized uniaxial force (exerted by a hemispherical stylus) on the voltage-current relationship of Au-KTaO3 Schottky barrier diodes is described. Pronounced reversible changes were observed and characterized by stress-induced decreases of up to 0.8 eV in the metal-semiconductor barrier height. The observed diode n values [n ≡ (q/kT)(dV/d ln J)] at 300°K ranged from 1.05 to 1.10. This indicates that thermionic field emission may be the dominant current flow mechanism. An analysis of the pressure profile produced by the stylus yields 4 × 10−11 V-cm2/dyn for the pressure sensitivity of the barrier height.
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Rideout et al. (1967) studied this question.
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