Deep impurity levels due to ion-implanted tellurium in n–silicon are studied. Two donor levels at Ec−0.13 and Ec−0.56 eV are obtained using deep level transient spectroscopy. Thermal electron capture cross sections for both levels are too large to be measured. Electron photoionization cross section spectrum confirms the Ec−0.56 level and also reveals an excited state 0.45 eV above the ground state.
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Kalyanaraman et al. (1983) studied this question.
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