The problem of the potential of a flat metallic disc embedded in a semiconductor and giving rise to a Schottky barrier is studied analytically. The space-charge region around the disc is approximately spheroidal; expressions are given which describe the size of this region and the space-charge potential. The theory is applied to platelet-shaped precipitates of NiSi 2 in silicon.
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C. Donolato (1993) studied this question.
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