Peculiarities of the Magnetoresistance of Hg1−xMnxTe

On semimetallic Hg1−xMnx Te samples with 0.02 ≦ x ≦ 0.06 the dependences of the Hall constant‐RH and longitudinal, ϱZZ, and transverse, ϱxx, magnetoresistances are investigated on the induction of magnetic field B in the region of 0 ≦ B ≦ 50 kG at temperatures 1.6 ≦ T ≦ 40 K. A maximum of ϱxx(B) observed in 5 to 7 kG fields at helium temperatures is accounted for by the contributions which both, conduction band electrons and impurity acceptor band holes, make to the transport processes. The decrease in magnetoresistance in fields B > 7 kG is attributed to the increase of the mobility of carriers in the impurity band due to the ordering of magnetic moments of manganese ions in the magnetic field. It is proved that the maximum ϱxx(T) at 7 ≦ B ≦ 12 kG occurring at temperatures between 2.5 and 5 K is not a thermooscillation peak.