Answers are grounded in this paper and cite their sources.
Transparent Cuprous oxide film was deposited by rapid thermal oxidation (RTO) of Cu at 500 ℃/45s condition on textured single-crystal n-Si substrate to form Cu₂O/n-Si heterojunction photodiode. The Hall effect measurements for the Cu₂O films showed a p-type conductivity. The photovoltaic and electrical properties of the junction at room temperature were investigated without any post-deposition annealing. I-V characteristics revealed that the junction has good rectifying properties. The C-V data showed abrupt junction and a built-in potential of 1 V. The photodiode showed good stability and high responsivity in the visible at three regions; 525 ㎚, 625-700 ㎚, and 750 nm denoted as regions A, B, and C, respectively.
No takes yet. Share an insight, caveat, or question.
Raid A. Ismail (2009) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: