A model of basal plane stacking faults as boundaries between incoherently scattering domains in m -plane GaN films is reviewed. m -Plane GaN films are analyzed with a modified version of the Williamson–Hall analysis in order to determine the length-scale of coherent scattering and tilt-mosaic contribution to X-ray rocking curve widths for the primary in-plane directions. This analysis shows that basal plane stacking faults are the predominant source of rocking-curve width anisotropy in the m -plane films, and indicate that the modified Williamson–Hall analysis can be used as a non-destructive technique for measuring basal plane stacking fault densities in m -GaN films.
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McLaurin et al. (2008) studied this question.
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