We have indicated the necessity for using statistical models to determine the reliability of deep-submicron MOSFETs. We have presented a methodology by which the reliability can be determined from short-time tests if the defect generation statistics are linked to variations in defect activation energies. We have shown that enhanced latent failures follow from our model for deep-submicron MOSFETs. Therefore, more stringent reliability standards are required, which can be validated by the use of short-time tests. Our model provides the means to calculate these novel reliability demands quantitatively.
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Hess et al. (2001) studied this question.