Microstructural evolution in H ion induced splitting of freestanding GaN

We investigated the microstructural transformations during hydrogen ion-induced splitting of GaN thin layers. Cross-sectional transmission electron microscopy and positron annihilation spectroscopy data show that the implanted region is decorated with a high density of 1–2nm bubbles resulting from vacancy clustering during implantation. These nanobubbles persist up to 450°C. Ion channeling data show a strong dechanneling enhancement in this temperature range tentatively attributed to strain-induced lattice distortion. The dechanneling level decreases following the formation of plateletlike structures at 475°C. Extended internal surfaces develop around 550°C leading to the exfoliation of GaN thin layer.