Structure, modeling, fabrication, and applications of carbon nanotube field-effect transistors: a comprehensive review

Carbon nanotube field effect transistors (CNTFETs) have emerged as a compelling alternative to overcome the limitations of standard Si-based complementary metal–oxide–semiconductor (CMOS) technology. As conventional CMOS devices are approaching their theoretical boundaries in scaling, the semiconductor industry is now focusing on exploring novel materials that can support further improvements in performance. Carbon nanotubes (CNTs) possess a variety of beneficial characteristics, including reduced short-channel effects, high carrier mobility, and high normalized drive currents. The characteristics of CNTFETs make them a highly viable option for substituting Si transistors in next-generation electronic devices. This paper provides a comprehensive overview of the latest advancements in CNTFET technology, emphasizing their potential applications and the progress made in incorporating CNTs into advanced electronic systems. Furthermore, it explores the future outlook for CNTFETs, considering the challenges and prospects that contribute to their adoption in increasingly miniaturized and high-performance transistor technologies.