Layer‐Controlled Low‐Power Tunneling Transistors Based on SnS Homojunction

Utilizing the layer‐controlled bandgap of a 2D material is an effective way of improving a tunneling field‐effect transistor (TFET) device's performance because of the narrowing tunneling barrier. An ab initio quantum transport method is used to study the SnS homojunction TFETs at a sub‐10 nm scale through layer controlling. The optimal SnS homojunction TFET has a bilayer SnS as the source electrode, which possesses a low leakage current like the ML SnS TFET and a high on‐state current like the BL SnS TFET. The low SSave_4dec (subthreshold swing over four decades of the drain currents) of ≈47–48 mV dec−1 and I60 (drain current at 60 mV dec−1) of ≈1.1–1.2 µA µm−1 implies the BL source SnS TFET, a fast low‐power (LP) device. The optimal BL source SnS TFET with a gate length of Lg = 10 nm exceeds the LP device requirement of the International Technology Roadmap for Semiconductors (ITRS) (2013 version), and its negative capacitance counterparts can exceed the ITRS 2028 target for LP device at Lg = 5 nm.