Thin films of Ba(1−x)SrxTiO3 (BST) have been deposited by off-axis cosputtering targets of SrTiO3 (STO) and BaTiO3 (BTO). The films were grown on (100) MgO and LaAlO3 substrates at 550 °C at an argon/oxygen gas pressure of 20 Pa. Reaction of the sputtered species in the plasma resulted in the growth of BST films. The film composition was set by the relative power levels of the STO and BTO targets. X-ray diffractometry indicated the as-deposited films were predominantly (h00) oriented. The calculated lattice parameter was 3.955±0.01 Å, slightly larger than bulk Ba0.5Sr0.5TiO3. Postannealing the films in flowing O2 at 780 °C resulted in greater peak heights and no change in orientation. Capacitance–voltage characteristics measured at 10 GHz yielded Q’s of 65 with nearly 14% tuning for BST on LAO and Q>1000 with a 2% tuning for films on MgO.
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Cukauskas et al. (1999) studied this question.
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