A method of quasidirect profiling of impact excitation of electroluminescence in a metal semiconductor junction utilizing the Auger quenching of a localized center luminescence by either free or weakly bound electrons is described. Experimental results obtained on CdF2:Mn,Y Schottky diodes unambiguously prove a spatial separation of the acceleration and collision excitation processes in high-field electroluminescence.
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Langer et al. (1981) studied this question.
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