Epitaxial junctions between ZnTe and CdS have been prepared by vapor deposition of CdS on ZnTe single crystals. Study of the growth habits of CdS on ZnTe have shown that an epitaxial deposit of CdS can be obtained only on the (111) Zn faces of ZnTe under the employed experimental conditions. Double injection behavior has been observed in heterojunctions with wide compensated regions between the p and the n parts of the junction. A tentative band model has been proposed for the ZnTe ‐ CdS junctions on the basis of the experimental findings.
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Aven et al. (1963) studied this question.