The reactive plasma sputtering technique is used to obtain a boron diffusion source in the form of borosilicate glass (BSG). Physlcal and chemical properties of the BSG films are investigated. Diffusion parameters of B in Si and SiO, are obtaincd in the temperature range between 950 and 1200 °C.
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Bagratishvili et al. (1979) studied this question.
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