Linearly ramped temperature transient rapid thermal oxidation of silicon

New results on the growth kinetics of rapid thermal oxidation of Si using transient linearity ramped saw-toothed and triangular wafer temperature versus time profiles are reported. The peak wafer temperature and the heat-up/cool-down rates were varied in the ranges of 950–1200 °C and 1–200 °C/s, respectively. The grown oxides were ∼20–200 Å thick depending on the growth conditions. A comparison of the experimental data with the numerical simulation results reveals that the thin oxide steady-state dry oxidation kinetics model underestimates the thickness of oxides grown by the ramped temperature transient oxidations.